The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Jan. 15, 2023
Sanying Wang, Luohe, CN;
Linzheng LI, Luohe, CN;
Ziheng Jin, Luohe, CN;
Yanjun Wen, Luohe, CN;
Abstract
The invention provides a D-psicose crystal and a preparation method thereof. The method comprises: adding a seed crystal to a D-psicose solution and stirring uniformly, subjecting the solution to crystallization by gradient cooling and constant-temperature crystallization alternately at 50-30° C., stopping the crystallization until the temperature of the solution is 30° C., separating the crystal by centrifugation, washing and drying, to obtain a D-psicose crystal. Rather than evaporative crystallization, organic solvent-assisted crystallization and ultrasonication, controllable crystallization by gradient cooling, constant-temperature crystallization, and other technical means are employed. Thus, the invention has low requirements for equipment, simple process, low energy consumption, and low preparation cost, and thus particularly suitable for large-scale industrial production and processing. The purity of the D-psicose crystal obtained is ≥98.5%, 80% by weight or more of the crystal has a grain size in the range of 20-40 meshes, and the yield per crystallization is ≥70%.