The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Mar. 14, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventor:
Jau-Yi Wu, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); G11C 13/0004 (2013.01); H10N 70/821 (2023.02); H10N 70/8413 (2023.02); H10N 70/883 (2023.02); H10N 70/884 (2023.02);
Abstract
The present disclosure provides a memory structure, including a first interlayer dielectric layer (ILD), a second ILD over the first ILD, wherein at least a portion of an interconnect structure is in the second ILD, a first switch between the first ILD and the second ILD, a second switch over the first switch, and a first phase change material stacking with the first switch and the second switch.