Manufacturing method of a memory and a memory

Abstract

A manufacturing method of a memory includes: providing a substrate and a bit line contact layer; forming a dummy bit line structure on top of the bit line contact layer; forming a spacer layer on the sidewall of both the dummy bit line structure and the bit line contact layer; forming a dielectric layer on the sidewall of the spacer layer; forming a sacrificial layer filling the area between adjacent dummy bit line structures, wherein the sacrificial layer covers the sidewall of the dielectric layer; after the sacrificial layer is formed, removing the dummy bit line structure; forming a bit line conductive portion which fills the hole and covers the bit line contact layer; and, after the bit line conductive portion is formed, removing the spacer layer.