The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Oct. 27, 2020
Applicant:

Kabushiki Kaisha Tokai-rika-denki-seisakusho, Aichi-ken, JP;

Inventors:

Kengo Shima, Aichi, JP;

Yoshikazu Kataoka, Aichi, JP;

Kazuya Adachi, Aichi, JP;

Yuto Hakamata, Aichi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/86 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8611 (2013.01); H01L 27/1203 (2013.01); H01L 29/0657 (2013.01); H01L 29/7838 (2013.01); H01L 29/78603 (2013.01);
Abstract

A semiconductor integrated circuit including: a substrate of a first conductivity type; a buried insulating film provided on the substrate; an active layer of the first conductivity type provided on the buried insulating film; a first impurity region of a second conductivity type formed within the active layer; an electric field relaxation layer of the second conductivity type formed within the active layer and surrounding the first impurity region; a second impurity region of the first conductivity type formed within the active layer and surrounding the electric field relaxation layer; and a groove formed surrounding the second impurity region and reaching the buried insulating film.


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