The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Mar. 13, 2019
Applicant:
Siltronic Ag, Munich, DE;
Inventors:
Michael Boy, Waging am See, DE;
Christina Kruegler, Dietersburg, DE;
Assignee:
Siltronic AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/08 (2006.01); G01N 21/21 (2006.01); G01N 21/95 (2006.01); H01L 21/324 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); C30B 33/08 (2013.01); G01N 21/21 (2013.01); G01N 21/9505 (2013.01); H01L 21/324 (2013.01); H01L 21/67288 (2013.01);
Abstract
Semiconductor wafers are produced by a process wherein a single-crystal ingot of semiconductor material is pulled and at least one wafer is removed from the ingot, wherein the wafer is subjected to a thermal treatment comprising a heat treatment step in which a radial temperature gradient acts on the wafer, wherein an analysis of the wafer of semiconductor material with respect to the formation of defects in the crystal lattice, so-called stress fields, is carried out.