The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Dec. 25, 2019
National University Corporation Hokkaido University, Hokkaido, JP;
Katsuhiro Tomioka, Hokkaido, JP;
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY, Hokkaido, JP;
Abstract
This complementary switch element includes: a first TFET having a first conductive channel; and a second TFET having a second conductive channel. Each of the first TFET and the second TFET includes: a group IV semiconductor substrate doped in a first conductive type; a nanowire which is formed of a group III-V compound semiconductor and is disposed on the group IV semiconductor substrate; a first electrode connected to the group IV semiconductor substrate; a second electrode connected to the nanowire; and a gate electrode. The nanowire includes a first area connected to the group IV semiconductor substrate and a second area doped in a second conductive type. In the first TFET, the second electrode is a source electrode, and the first electrode is a drain electrode. In the second TFET, the first electrode is a source electrode, and the second electrode is a drain electrode.