The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Apr. 30, 2021
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventor:
Kazuma Matsui, Tokyo, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); B08B 9/08 (2006.01); C09K 13/00 (2006.01); C23F 1/10 (2006.01); C23F 1/12 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); B08B 9/08 (2013.01); C09K 13/00 (2013.01); C23F 1/10 (2013.01); C23F 1/12 (2013.01); H01L 21/302 (2013.01); H01L 21/32135 (2013.01); B08B 2209/08 (2013.01);
Abstract
A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched () including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.