The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Aug. 07, 2021
Applicant:

Changxin Memory Technologies, Inc., Anhui, CN;

Inventor:

Zhen Zhou, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H10B 12/00 (2023.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H10B 12/00 (2023.02); H10B 12/01 (2023.02); H10B 12/02 (2023.02); H01L 21/3081 (2013.01); H01L 27/0207 (2013.01); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract

A semiconductor structure and a manufacturing method thereof are provided. The method includes: providing a substrate; forming, on the substrate, a first mask layer having a plurality of strip-shaped first patterns arranged in parallel; forming, on the first mask layer, a second mask layer having a plurality of strip-shaped second patterns arranged in parallel; forming, on the second mask layer, a third mask layer having a plurality of strip-shaped third patterns arranged in parallel, the second patterns overlap with the third patterns, and the second patterns and the third patterns are configured to sever the first patterns at predetermined positions; and performing layer-by-layer etching, using the first mask layer, the second mask layer, and the third mask layer as masks to transfer the first patterns, the second patterns, and the third patterns to the substrate to form an array of discrete active areas.


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