The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Mar. 22, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Xue Bai Pitner, Sunnyvale, CA (US);

Yu-Chung Lien, San Jose, CA (US);

Ravi Kumar, Redwood City, CA (US);

Jiahui Yuan, Fremont, CA (US);

Bo Lei, San Jose, CA (US);

Zhenni Wan, San Jose, CA (US);

Assignee:

SanDisk Technologies, LLC, Addison, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01);
Abstract

The memory device includes a plurality of memory cells, which include a first set of memory cells and a second set of memory cells. A controller is in communication with the memory cells. The controller is configured to, in a first programming pass and then a second programming pass, program the memory cells of the first and second sets to respective final threshold voltages associated with a plurality of programmed data states. The controller is further configured to, in the first programming pass, verify the first set of memory cells at a first set of checkpoint data states and verify the second set of memory cells at a second set of checkpoint data states that is different than the first set of checkpoint data states.


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