The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Jan. 27, 2020
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Joshua Collins, Sunnyvale, CA (US);

Griffin John Kennedy, San Leandro, CA (US);

Hanna Bamnolker, Cupertino, CA (US);

Patrick A. van Cleemput, San Jose, CA (US);

Seshasayee Varadarajan, Lake Oswego, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/08 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/52 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/08 (2013.01); C23C 16/308 (2013.01); C23C 16/34 (2013.01); C23C 16/45525 (2013.01); C23C 16/52 (2013.01); H01L 21/28568 (2013.01); H01L 21/02175 (2013.01); H01L 21/0228 (2013.01);
Abstract

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.


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