The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Jan. 15, 2021
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Wei-Chen Chen, Taoyuan, TW;
Hang-Ting Lue, Hsinchu, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 29/10 (2006.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 29/1037 (2013.01); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract
A memory device includes a source element, a drain element, channel layers, control electrode layers, and a memory layer. The channel layers are individually electrically connected between the source element and the drain element. Memory cells are defined in the memory layer between the control electrode layers and the channel layers.
Chen, Wei-Chen. (2024). Memory device with vertically separated channels (U.S. Patent No. 11968833). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11968833
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile