The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Jul. 15, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/56 (2006.01); C23C 14/06 (2006.01); C23C 14/54 (2006.01); C23C 14/58 (2006.01); H01J 37/34 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0682 (2013.01); C23C 14/542 (2013.01); C23C 14/56 (2013.01); C23C 14/5806 (2013.01); H01J 37/3429 (2013.01); H01L 21/28556 (2013.01);
Abstract
Methods for forming a nickel silicide material on a substrate are disclosed. The methods include depositing a first nickel silicide seed layer atop a substrate at a temperature of about 15° C. to about 27° C., annealing the first nickel silicide seed layer at a temperature of 400° C. or less such as over 350° C.; and depositing a second nickel silicide layer atop the first nickel silicide seed layer at a temperature of about 15° C. to about 27° C. to form the nickel silicide material.