logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11961911 B1

PDFFull Text
Date of Patent:
Apr. 16, 2024

Filed:

Apr. 04, 2022

Semiconductor devices including channel regions having non-uniform ge concentration

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsiao-Chun Chang, Hukou Township, TW;

Guan-Jie Shen, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

STUDEBAKER & BRACKETT PC

Primary Examiner:

Nilufa Rahim

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/02532 (2013.01); H01L 21/02675 (2013.01); H01L 21/324 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/105 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01);
Abstract

In a method of manufacturing a semiconductor device including a Fin FET, a fin structure, which has an upper fin structure made of SiGe and a bottom fin structure made of a different material than the upper fin structure, is formed, a cover layer is formed over the fin structure, a thermal operation is performed on the fin structure covered by the cover layer, and a source/drain epitaxial layer is formed in a source/drain region of the upper fin structure. The thermal operation changes a germanium distribution in the upper fin structure.

Find Patent Forward Citations

Quick Actions:

Chang, Hsiao-Chun. (2024). Semiconductor devices including channel regions having non-uniform ge concentration (U.S. Patent No. 11961911). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11961911

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…