The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Jan. 23, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Yao Lin, New Taipei, TW;

Hsiao Wen Lee, Hsinchu, TW;

Yu-Shan Cheng, Hsinchu, TW;

Chao-Cheng Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/764 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6653 (2013.01); H01L 21/764 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/6656 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.


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