The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
Aug. 09, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yuan-Yang Hsiao, Hsinchu, TW;
Hsiang-Ku Shen, Hsinchu, TW;
Tsung-Chieh Hsiao, Changhua County, TW;
Ying-Yao Lai, Hsinchu, TW;
Dian-Hau Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes first and second metal-insulator-metal structures. The first metal-insulator-metal structure includes a first bottom conductor plate, a first portion of a first dielectric layer, a first middle conductor plate, a first portion of a second dielectric layer, and a first top conductor plate stacked up one over another. The second metal-insulator-metal structure includes a second bottom conductor plate, a second portion of the first dielectric layer, a second middle conductor plate, a second portion of the second dielectric layer, and a second top conductor plate stacked up one over another. In a cross-sectional view, the first bottom conductor plate is wider than the first middle conductor plate that is wider than the first top conductor plate, and the second bottom conductor plate is narrower than the second middle conductor plate that is narrower than the first top conductor plate.