The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
May. 17, 2023
Applicant:
Unity Semiconductor, Montbonnot-Saint-Martin, FR;
Inventor:
Wolfgang Alexander Iff, Domène, FR;
Assignee:
UNITY SEMICONDUCTOR, Montbonnot-Saint-Martin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/22 (2006.01); G01B 9/02 (2022.01); G01B 9/02015 (2022.01); G01B 9/02055 (2022.01); G01B 9/0209 (2022.01); G01B 11/04 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01B 11/22 (2013.01); G01B 9/0203 (2013.01); G01B 9/02038 (2013.01); G01B 9/02063 (2013.01); G01B 9/02069 (2013.01); G01B 9/0209 (2013.01); G01B 11/046 (2013.01); H01L 22/12 (2013.01);
Abstract
A method for characterising high aspect ratio ('HAR') structures etched in a substrate includes, for at least one structure, an interferometric measurement step, carried out with a low-coherence interferometer positioned on a top surface of the substrate, for measuring with a measurement beam, at least one depth data relating to a depth of the HAR structure, and a first adjusting step for adjusting a diameter, at the top surface, of the measurement beam according to at least one top critical dimension (“top-CD”) data relating to a width of the HAR structure.