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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11956938 B1

PDFFull Text
Date of Patent:
Apr. 09, 2024

Filed:

Jun. 28, 2022

Semiconductor device and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tetsu Ohtou, Hsinchu, TW;

Ching-Wei Tsai, Hsinchu, TW;

Kuan-Lun Cheng, Hsinchu, TW;

Yasutoshi Okuno, Hsinchu, TW;

Jiun-Jia Huang, Yunlin County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823481 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/1095 (2013.01); H01L 21/823878 (2013.01);
Abstract

A device incudes a substrate. A first fin and a second fin are over the substrate. An isolation structure is laterally between the first fin and the second fin. A gate structure crosses the first fin and the second fin. A first source/drain epitaxy structure is over the first fin. A second source/drain epitaxy structure is over the second fin. A spacer layer extends from a first sidewall of the first fin to a first sidewall of the second fin along a top surface of the isolation structure.

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