The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Sep. 11, 2021
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chun-Sung Huang, Changhua County, TW;

Chi Ren, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/30 (2023.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 29/40117 (2019.08); H01L 29/42344 (2013.01); H01L 29/66833 (2013.01);
Abstract

A semiconductor memory device includes a substrate; a control gate disposed on the substrate; a source diffusion region disposed in the substrate and on a first side of the control gate; a select gate disposed on the source diffusion region, wherein the select gate has a recessed top surface; a charge storage structure disposed under the control gate; a first spacer disposed between the select gate and the control gate and between the charge storage structure and the select gate; a wordline gate disposed on a second side of the control gate opposite to the select gate; a second spacer between the wordline gate and the control gate; and a drain diffusion region disposed in the substrate and adjacent to the wordline gate.


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