The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Sep. 08, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Takeshi Suwa, Kawasaki Kanagawa, JP;
Tomoko Matsudai, Shibuya Tokyo, JP;
Yoko Iwakaji, Meguro Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices and Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes first and second electrodes, a semiconductor part therebetween, first to third control electrodes inside the semiconductor part, and first to third interconnects. The first and second control electrodes are arranged along a front surface of the semiconductor part. The third control electrodes are provided between the first electrode and the first and second electrodes, respectively. The first and second interconnect are electrically connected to the first and second control electrodes, respectively. The third interconnect is electrically connected to the third control electrodes. The semiconductor layer includes first and third layers of a first conductivity type and a second layer of a second conductivity type. The second layer is provided between the first layer and the second electrode. The third layer is provided between the second layer and the second electrode. The second layer faces the first and second control electrodes via insulating portions.