The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Sep. 29, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sohye Cho, Hwaseong-si, KR;

Pilkyu Kang, Hwaseong-si, KR;

Kwangjin Moon, Hwaseong-si, KR;

Taeseong Kim, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/50 (2006.01); H01L 23/528 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 23/5286 (2013.01); H10B 10/12 (2023.02); H01L 23/50 (2013.01);
Abstract

An integrated circuit semiconductor device includes a substrate including a first surface and a second surface opposite the first surface, a trench in the substrate, the trench extending from the first surface of the substrate toward the second surface of the substrate, a through silicon via (TSV) landing part in the trench, the TSV landing part having a first portion spaced apart from the first surface of the substrate, and a second portion between the first portion and the first surface of the substrate, the first portion being wider than the second portion, a TSV hole in the substrate, the TSV hole extending from the second surface of the substrate and aligned with a bottom surface of the TSV landing part, and a TSV in the TSV hole and in contact with the bottom surface of the TSV landing part.


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