The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Nov. 18, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Kuo-Chiang Tsai, Hsinchu, TW;
Jyh-Huei Chen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 21/027 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/32133 (2013.01); H01L 23/5226 (2013.01); H01L 21/0274 (2013.01); H01L 21/3212 (2013.01); H01L 21/76802 (2013.01); H01L 21/7684 (2013.01);
Abstract
In one example, a semiconductor device includes a first conductive feature embedded in a first dielectric layer such that a top surface of the first dielectric layer is higher than a top surface of first conductive feature, a contact etch stop layer (CESL) disposed on the first dielectric layer, and a second conductive feature embedded in a second dielectric layer. The second dielectric layer is disposed on the CESL and the second conductive feature extends through the CESL and is in direct contact with the first conductive feature.