The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Nov. 04, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Sunil Kumar Singh, Hsinchu, TW;

Chung-Ju Lee, Hsinchu, TW;

Tien-I Bao, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76807 (2013.01); H01L 21/76808 (2013.01); H01L 21/7682 (2013.01); H01L 21/76835 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 21/76885 (2013.01); H01L 23/481 (2013.01); H01L 23/5222 (2013.01); H01L 23/53238 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 21/76814 (2013.01); H01L 21/76831 (2013.01); H01L 2221/1026 (2013.01); H01L 2221/1031 (2013.01); H01L 2221/1036 (2013.01); H01L 2221/1047 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Some embodiments relate to a semiconductor device disposed on a semiconductor substrate. A dielectric structure is arranged over the semiconductor substrate. First and second metal vias are disposed in the dielectric structure and spaced laterally apart from one another. First and second metal lines are disposed in the dielectric structure and have nearest neighboring sidewalls that are spaced laterally apart from one another by a portion of the dielectric structure. The first and second metal lines contact upper portions of the first and second metal vias, respectively. First and second air gaps are disposed in the portion of the dielectric structure. The first and second air gaps are proximate to nearest neighboring sidewalls of the first and second metal lines, respectively.


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