The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Aug. 08, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/31055 (2013.01); H01L 21/7682 (2013.01); H01L 21/76831 (2013.01); H01L 21/76897 (2013.01);
Abstract
A method for preparing a semiconductor device includes: providing a semiconductor substrate, in which a trench is formed on the semiconductor substrate, a filling layer is formed in the trench, and a void is formed in the filling layer; removing a portion of the filling layer to expose the void; forming a plug, in which the plug is configured to plug the void and extends into the void by at least a preset distance; and removing a portion of the filling layer and remaining the plug with at least a preset height until the filling layer reaches a preset thickness to form a contact hole.