The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Mar. 22, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Jethro Tannos, San Jose, CA (US);
Bhargav Sridhar Citla, Fremont, CA (US);
Srinivas D. Nemani, Saratoga, CA (US);
Ellie Yieh, San Jose, CA (US);
Joshua Alan Rubnitz, Monte Sereno, CA (US);
Erica Chen, Santa Clara, CA (US);
Soham Sunjay Asrani, San Jose, CA (US);
Nikolaos Bekiaris, Campbell, CA (US);
Douglas Arthur Buchberger, Jr., Livermore, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHfilm onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHfilm to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.