The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Jun. 17, 2022
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Srinivas Gandikota, Santa Clara, CA (US);
Yixiong Yang, San Jose, CA (US);
Jacqueline Samantha Wrench, Santa Clara, CA (US);
Yong Yang, Mountain View, CA (US);
Steven C. H. Hung, Sunnyvale, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02247 (2013.01); H01L 21/02043 (2013.01); H01L 21/02274 (2013.01); H01L 21/28185 (2013.01); H01L 21/28202 (2013.01); H01L 21/67023 (2013.01); H01L 21/67207 (2013.01);
Abstract
A method of forming a high-κ dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-κ dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-κ dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-κ dielectric cap layer, and removing the sacrificial silicon cap layer.