The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Jul. 13, 2022
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Po-Hao Tseng, Taichung, TW;

Tian-Cih Bo, Zhubei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 15/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3404 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 15/04 (2013.01); G11C 15/046 (2013.01);
Abstract

A memory device for in-memory search is provided. The memory device includes a plurality of memory cells, and each of the memory cells stores a stored data and receives a search data, including a first transistor and a second transistor. The first transistor has a first threshold voltage and receives a first gate bias. The second transistor is connected to the first transistor, and the second transistor has a second threshold voltage and receives a second gate bias. The stored data is encoded according to the first threshold voltage and the second threshold voltage, and the search data is encoded according to the first gate bias and the second gate bias. There is a mismatch distance between the stored data and the search data. An output current generated by each of the memory cells is related to the mismatch distance.


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