The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
May. 24, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Yifei Pan, Hefei, CN;
Xiaodong Luo, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); G01R 31/27 (2006.01); G01R 31/28 (2006.01); G11C 29/02 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2642 (2013.01); G01R 31/2621 (2013.01); G01R 31/275 (2013.01); G01R 31/2884 (2013.01); G11C 29/022 (2013.01); H01L 22/34 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An embodiment of the present application provides a test method for tolerance against the hot carrier effect, applied to an I/O circuit of a memory, the I/O circuit having an output terminal, comprising: controlling the output terminal to alternately output a first level and a second level, the first level being higher than the second level; obtaining a degradation rate of an output performance parameter of the I/O circuit according to the first level and the second level; and obtaining tolerance of the I/O circuit against the hot carrier effect based on the degradation rate.