The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Oct. 30, 2020
Applicant:

Ferroelectric Memory Gmbh, Dresden, DE;

Inventors:

Stefan Ferdinand Müller, Dresden, DE;

Patrick Polakowski, Dresden, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H01L 28/56 (2013.01); H01L 28/57 (2013.01); H01L 28/65 (2013.01); H01L 28/84 (2013.01);
Abstract

According to various aspects, a memory cell is provided, the memory cell including: a first electrode; a second electrode; and a memory structure disposed between the first electrode and the second electrode, the first electrode, the second electrode, and the memory structure forming a memory capacitor, wherein at least one of the first electrode or the second electrode includes: a first electrode layer including a first material having a first microstructure; a functional layer in direct contact with the first electrode layer; and a second electrode layer in direct contact with the functional layer, the second electrode layer including a second material having a second microstructure different from the first microstructure.


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