The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Ming Chyi Liu, Hsinchu, TW;
Chun-Tsung Kuo, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate, at least one dielectric layer and a capacitor structure. The at least one dielectric layer is disposed over the substrate, and the at least one dielectric layer includes a step edge profile. The capacitor structure is disposed over the substrate. The capacitor structure includes a bottom electrode, a capacitor dielectric layer and a top electrode. The bottom electrode covers the step edge profile of the at least one dielectric layer and has a first step profile substantially conformal to the step edge profile of the at least one dielectric layer. The capacitor dielectric layer covers the bottom electrode and has a second step profile substantially conformal to the first step profile. The top electrode covers the capacitor dielectric layer.