The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

May. 06, 2021
Applicants:

Qualcomm Technologies, Inc., San Diego, CA (US);

Rf360 Europe Gmbh, Munich, DE;

Inventors:

Jose Moreira, Munich, DE;

Markus Valtere, Bavaria, DE;

Juergen Portmann, Bavaria, DE;

Jeroen Bielen, Molenhoek, NL;

Assignees:

QUALCOMM TECHNOLOGIES INCORPORATED, San Diego, CA (US);

RF360 EUROPE GMBH, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/373 (2006.01); H01L 23/522 (2006.01); H03F 3/213 (2006.01); H05K 1/02 (2006.01); H01L 21/60 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 21/56 (2013.01); H01L 23/31 (2013.01); H01L 23/3736 (2013.01); H01L 23/5226 (2013.01); H03F 3/213 (2013.01); H05K 1/0206 (2013.01); H01L 2021/60007 (2013.01); H01L 23/3675 (2013.01); H01L 24/25 (2013.01);
Abstract

Disclosed are apparatuses and methods for fabricating the apparatuses. In one aspect, an apparatus includes a high-power die mounted on a backside of a package substrate. A heat transfer layer is disposed on the backside of the high-power die. A plurality of heat sink interconnects is coupled to the heat transfer layer. The plurality of heat sink interconnects is located adjacent the high-power die in a horizontal direction.


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