The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Feb. 24, 2022
Tokyo Electron Limited, Tokyo, JP;
Takumi Honda, Koshi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A substrate processing method includes preparing a phosphoric acid processing liquid, etching a substrate and increasing a concentration of the precipitation inhibitor. The phosphoric acid processing liquid is prepared by supplying a precipitation inhibitor into a phosphoric acid aqueous solution. The substrate having a silicon oxide film and a silicon nitride film is etched by immersing the substrate in a processing tub. The concentration of the precipitation inhibitor is increased by additionally supplying the precipitation inhibitor into the phosphoric acid processing liquid when a number of substrates etched has reached a first threshold value or when a silicon concentration in the phosphoric acid processing liquid has reached a second threshold value. The etching of the substrate comprises etching a new substrate by immersing the new substrate in the processing tub in which the phosphoric acid processing liquid with the increased concentration of the precipitation inhibitor is stored.