The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Jun. 23, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Beijing Superstring Academy of Memory Technology, Beijing, CN;
Xiaoguang Wang, Hefei, CN;
Dinggui Zeng, Hefei, CN;
Huihui Li, Hefei, CN;
Jiefang Deng, Hefei, CN;
Kanyu Cao, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, Beijing, CN;
Abstract
The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a transistor, including a control terminal, a first terminal, and a second terminal; a first magnetic memory structure, a bottom electrode of which is electrically connected to the first terminal of the transistor; a second magnetic memory structure, a top electrode of which is electrically connected to the first terminal of the transistor, the bottom electrode of the first magnetic memory structure is located in a same layer with a bottom electrode of the second magnetic memory structure; a first bit line, electrically connected to a top electrode of the first magnetic memory structure; a second bit line, electrically connected to the bottom electrode of the second magnetic memory structure; and a selection line, electrically connected to a second terminal of the transistor.