The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Sep. 13, 2019
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Norwegian University of Life Sciences, As, NO;
Torbjørn Mehl, Ås, NO;
Espen Olsen, Ås, NO;
Ingunn Burud, Ås, NO;
Lisa Kvalbein, Ås, NO;
Elénore Letty, Grenoble, FR;
Wilfried Favre, Grenoble, FR;
Jordi Veirman, Grenoble, FR;
Abstract
A method for determining the thermal donor concentration of a test sample made of a semiconductor material, includes providing a reference sample made of the same semiconductor material and having a known thermal donor concentration; measuring a photoluminescence signal of the reference sample for a photon energy comprised between 0.65 eV and 0.8 eV, the photoluminescence signal of the reference sample exhibiting an intensity peak in a photon energy range of 0.65 eV to 0.8 eV; determining, from the photoluminescence signal, an experimental relationship between the thermal donor concentration and a parameter representative of the intensity peak; measuring a photoluminescence signal of the test sample for at least one photon energy comprised between 0.65 eV and 0.8 eV; determining from the photoluminescence signal a specific value of the parameter; and determining the thermal donor concentration from the specific value of the parameter by using the experimental relationship.