The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Jan. 06, 2020
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventor:
Yohei Fujikawa, Hikone, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/06 (2006.01); C23C 14/06 (2006.01); C23C 14/24 (2006.01); C30B 29/36 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C30B 23/066 (2013.01); C23C 14/0635 (2013.01); C23C 14/243 (2013.01); C30B 29/36 (2013.01); C30B 35/002 (2013.01);
Abstract
According to the invention, a SiC single crystal growth crucible includes: a raw material accommodation portion which accommodates a SiC raw material; and a seed crystal support portion which supports a seed crystal disposed on an upper portion of the raw material accommodation portion, in which the raw material accommodation portion has a tapered portion, an inner surface of which is tapered off downward.
Fujikawa, Yohei. (2024). Sic single crystal growth crucible, sic single crystal manufacturing method, and sic single crystal manufacturing apparatus (U.S. Patent No. 11946156). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11946156
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile