The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Jun. 30, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventor:

Chern-Yow Hsu, Chu-Bei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract

The present disclosure relates to an integrated chip. The integrated chip includes one or more lower interconnect layers arranged within one or more stacked inter-level dielectric (ILD) layers over a substrate. An etch stop structure is disposed over the one or more lower interconnect layers and a bottom electrode is disposed over the etch stop structure. The bottom electrode electrically contacts the one or more lower interconnect layers. A magnetic tunnel junction (MTJ) stack is disposed over the bottom electrode. The MTJ stack has sidewalls arranged at a first angle with respect to a bottom surface of the MTJ stack. A top electrode is disposed over the MTJ stack. The top electrode has sidewalls arranged at a second angle with respect to a bottom surface of the top electrode. The second angle is greater than the first angle.


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