The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Apr. 01, 2021
Applicant:
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Inventors:
Quentin Hubert, Marseilles, FR;
Abderrezak Marzaki, Aix en Provence, FR;
Julien Delalleau, Marseilles, FR;
Assignee:
STMicroelectronics (Rousset) SAS, Rousset, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/35 (2023.01); G11C 5/06 (2006.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); G11C 5/063 (2013.01); H10B 43/10 (2023.02);
Abstract
In one embodiment, a non-volatile memory device includes a vertical state transistor disposed in a semiconductor substrate, where the vertical state transistor is configured to trap charges in a dielectric interface between a semiconductor well and a control gate. A vertical selection transistor is disposed in the semiconductor substrate. The vertical selection transistor is disposed under the state transistor, and configured to select the state transistor.