The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Feb. 22, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Chris M. Carlson, Nampa, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/512 (2013.01); H10B 43/35 (2023.02);
Abstract
Various embodiments include methods and apparatus having a number of charge trap structures, where each charge trap structure includes a dielectric barrier between a gate and a blocking dielectric region, the blocking dielectric region located on a charge trap region of the charge trap structure. At least a portion of the gate can be separated by a void from a region which the charge trap structure is directly disposed. Additional apparatus, systems, and methods are disclosed.