The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Sep. 15, 2021
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Kyong Jin Hwang, Singapore, SG;
Milova Paul, Singapore, SG;
Sagar Premnath Karalkar, Singapore, SG;
Robert J. Gauthier, Jr., Williston, VT (US);
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/8222 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 21/8222 (2013.01); H01L 27/0288 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to high-voltage electrostatic discharge (ESD) devices and methods of manufacture. The structure includes a vertical silicon-controlled rectifier (SCR) connecting to an anode, and includes a buried layer of a first dopant type in electrical contact with an underlying buried layer a second dopant type split with an isolation region of the first dopant type within a substrate.