The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Jun. 30, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Shiu-Ko JangJian, Tainan, TW;
Tsung-Hsuan Hong, Tainan, TW;
Chun Che Lin, Tainan, TW;
Chih-Nan Wu, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76802 (2013.01); H01L 21/76807 (2013.01); H01L 21/76826 (2013.01); H01L 21/76829 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 23/53238 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 21/76849 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.