The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Jul. 23, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Po-Chuan Tsai, Hsinchu, TW;

Wei-Ken Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/768 (2013.01); H01L 23/528 (2013.01); H01L 24/14 (2013.01);
Abstract

A semiconductor structure includes a combined feature, a protection layer and a polymeric layer. The combined feature includes a passivation layer, an interconnecting structure disposed on the passivation layer, and a dielectric layer disposed on the passivation layer and the interconnecting structure. The protection layer is disposed on the dielectric layer, and is oxide-and-nitride based. The polymeric layer is disposed on the protection layer, and is separated from the interconnecting structure by the protection layer. A method of making a semiconductor structure is also provided.


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