The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Dec. 12, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kishore Kumar Muchherla, San Jose, CA (US);

Harish R. Singidi, Fremont, CA (US);

Vamsi Pavan Rayaprolu, Santa Clara, CA (US);

Ashutosh Malshe, Fremont, CA (US);

Sampath K. Ratnam, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01);
Abstract

A request to perform a secure erase operation for a memory component can be received. A voltage level of a pass voltage that is applied to unselected wordlines of the memory component during a read operation can be determined. A voltage pulse can be applied during a program operation to at least one wordline of the memory component to perform the secure erase operation. The voltage pulse can exceed the pass voltage applied to the unselected wordlines of the memory component during the read operation.


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