The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Nov. 10, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chung-Cheng Chou, Hsinchu, TW;

Zheng-Jun Lin, Hsinchu, TW;

Pei-Ling Tseng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0038 (2013.01); G11C 13/003 (2013.01); G11C 2213/15 (2013.01); G11C 2213/79 (2013.01);
Abstract

A resistive random-access memory (RRAM) circuit includes an RRAM device configured to output a cell current responsive to a bit line voltage, and a current limiter including an input terminal coupled to the RRAM device, first and second parallel current paths configured to conduct the cell current between the input terminal and a reference voltage node, and an amplifier configured to generate a first signal responsive to a voltage level at the input terminal and a reference voltage level. Each of the first and second current paths includes a switching device configured to selectively conduct a portion of the cell current responsive to the first signal.


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