The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Jan. 26, 2018
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Takafumi Dasai, Ibaraki, JP;

Shinichiro Senda, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C22C 27/04 (2006.01); B22F 3/10 (2006.01); B22F 3/14 (2006.01); B22F 3/15 (2006.01); C23C 14/34 (2006.01); B22F 1/05 (2022.01);
U.S. Cl.
CPC ...
C22C 27/04 (2013.01); B22F 3/10 (2013.01); B22F 3/14 (2013.01); B22F 3/15 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); B22F 1/05 (2022.01); B22F 2998/10 (2013.01);
Abstract

There is provided a tungsten sputtering target that can provide a film deposition rate with less fluctuation over the target life. A tungsten sputtering target, wherein an area ratio of crystal grains having any of {100}, {110} and {111} planes oriented to a sputtering surface is 30% or less for any of the orientation planes, and an area ratio in total of crystal grains having orientation planes oriented to the sputtering surface other than {100}, {110} and {111} planes is 46% or more, the area ratio being obtained by an analysis of a cross section perpendicular to the sputtering surface with an inverse pole figure mapping using electron backscatter diffraction.


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