The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Oct. 15, 2021
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Young Gwang Yoon, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/022 (2013.01); H01L 21/76849 (2013.01); H01L 21/7685 (2013.01); H01L 29/401 (2013.01); H01L 29/513 (2013.01);
Abstract
The present invention provides a semiconductor device including a capping layer of a reduced thickness and capable of preventing regrowth of an interface layer caused by oxygen injection, and a method for fabricating the same. According to an embodiment of the present invention, the semiconductor device comprises: an interface layer on a substrate; a high-k layer on the interface layer; a gate electrode on the high-k layer; and a capping layer including a first oxygen barrier layer and a second oxygen barrier layer on the gate electrode.