The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Jul. 27, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yu-Lien Huang, Jhubei, TW;

Guan-Ren Wang, Hsinchu, TW;

Ching-Feng Fu, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/764 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/764 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H10B 10/12 (2023.02);
Abstract

In an embodiment, a device includes: a first source/drain region; a second source/drain region; an inter-layer dielectric (ILD) layer over the first source/drain region and the second source/drain region; a first source/drain contact extending through the ILD layer, the first source/drain contact connected to the first source/drain region; a second source/drain contact extending through the ILD layer, the second source/drain contact connected to the second source/drain region; and an isolation feature between the first source/drain contact and the second source/drain contact, the isolation feature including a dielectric liner and a void, the dielectric liner surrounding the void.


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