The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

May. 17, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Jia Wang, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G11C 7/06 (2006.01); G11C 7/10 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 11/4096 (2006.01); G11C 11/413 (2006.01); G11C 11/419 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G11C 7/06 (2013.01); G11C 7/1069 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01); G11C 11/4096 (2013.01); G11C 11/413 (2013.01); G11C 11/419 (2013.01); G11C 29/04 (2013.01);
Abstract

A memory includes a storage circuit, a first reading circuit, a second reading circuit, and a plurality of correcting circuits. The storage circuit includes a plurality of sense amplifier arrays and a plurality of storage unit arrays. The sense amplifier arrays and the storage unit arrays are arranged alternately, and the sense amplifier arrays are configured to perform data reading and writing on the storage unit arrays. The first reading circuit is configured to compare a reference voltage signal with a signal on a first data line corresponding to the first reading circuit, and output a comparison result as read-out data. The second reading circuit is configured to compare the reference voltage signal with a signal on a first data line corresponding to the second reading circuit, and output a comparison result as read-out data.


Find Patent Forward Citations

Wang, Jia. (2024). Memory using dual sense amplifiers for error detection and correction (U.S. Patent No. 11935612). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11935612

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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