The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Sep. 10, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Zhuo Chen, Hefei, CN;

Ying-Chih Wang, Hefei, CN;

Shih-Shin Wang, Hefei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H10B 12/03 (2023.02); H01L 28/40 (2013.01); H10B 12/01 (2023.02);
Abstract

A Dynamic Random Access Memory (DRAM) capacitor and a preparation method therefor are provided. The DRAM capacitor includes a dielectric layer, and the dielectric layer includes a high dielectric material layer, and low dielectric loss material layers provided on both side surfaces of the high dielectric material layer.


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