The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Jun. 20, 2019
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Chieh-Jen Ku, Hillsboro, OR (US);
Pei-Hua Wang, Beaverton, OR (US);
Bernhard Sell, Portland, OR (US);
Travis W. Lajoie, Forest Grove, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/42384 (2013.01); H01L 29/41733 (2013.01); H01L 29/41775 (2013.01); H01L 29/66742 (2013.01); H10B 12/00 (2023.02); H10B 12/01 (2023.02);
Abstract
A device is disclosed. The device includes a source contact and a drain contact, a first dielectric between the source contact and the drain contact, a channel under the source contact and the drain contact, and a gate electrode below the channel, the gate electrode in an area under the first dielectric that does not laterally extend under the source contact or the drain contact. A second dielectric is above the gate electrode and underneath the channel.