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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11929406 B1

PDFFull Text
Date of Patent:
Mar. 12, 2024

Filed:

Feb. 19, 2021

Semiconductor device and method for manufacturing the same

Applicant:

Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;

Inventors:

Qiyue Zhao, Suzhou, CN;

Wuhao Gao, Suzhou, CN;

Fengming Lin, Suzhou, CN;

Assignee:

INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;

Attorney:

JCIPRNET

Primary Examiner:

Daniel P Shook

Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/404 (2013.01); H01L 21/56 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/41775 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract

A semiconductor device includes a gate electrode, first and second passivation layers, first and second field plates. The gate electrode is disposed above nitride-based semiconductor layers. The first passivation layer covers the gate electrode. The first field plate is disposed on the first passivation layer. The first passivation layer has a first portion covered with the first field plate and a second portion free from coverage of the first field plate. The second passivation layer covers the first field plate. The second field plate is disposed over the second passivation layer. The second passivation has a first portion covered with the second field plate and a second portion is free from coverage of the second field plate. A thickness difference between the first and second portions of the first passivation layer is less than a thickness difference between the first and second portions of the second passivation layer.

Find Patent Forward Citations

Zhao, Qiyue. (2024). Semiconductor device and method for manufacturing the same (U.S. Patent No. 11929406). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11929406

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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