The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Sep. 01, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alexander Reznicek, Troy, NY (US);

Takashi Ando, Eastchester, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Nanbo Gong, White Plains, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); G06N 3/065 (2023.01); G11C 11/402 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/40114 (2019.08); G06N 3/065 (2023.01); G11C 11/4023 (2013.01); H10B 12/30 (2023.02);
Abstract

A semiconductor structure comprises a gate structure of a transistor. The gate structure comprises a gate conductive portion disposed on a gate dielectric layer. The semiconductor structure further comprises a capacitor structure disposed on the gate structure. The capacitor structure comprises a first conductive layer, a dielectric layer disposed on the first conductive layer and a second conductive layer disposed on the dielectric layer. The first and second conductive layers are respectively connected to a first contact portion and a second contact portion.


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